Skip to Main content Skip to Navigation
Conference papers

A Sextuple Cross-Coupled SRAM Cell Protected against Double-Node Upsets

Abstract : In this paper, we propose a sextuple cross-coupled SRAM cell, namely SCCS18T, protected against double-node upsets. Since the proposed SCCS18T cell forms a large feedback loop for value retention and error interception, the cell can self-recover from all possible single-node upsets (SNUs) and a part of double-node upsets (DNUs). Moreover, the proposed cell has optimized operation speed due to the use of parallel access transistors. Simulation results demonstrate that the proposed SCCS18T cell can approximately save 65% read access time at the cost of 49% power dissipation and 50% silicon area on average, compared with the state-of-the-art hardened SRAM cells.
Complete list of metadata

https://hal-lirmm.ccsd.cnrs.fr/lirmm-03035825
Contributor : Isabelle Gouat Connect in order to contact the contributor
Submitted on : Wednesday, December 2, 2020 - 1:08:07 PM
Last modification on : Friday, August 5, 2022 - 3:03:29 PM
Long-term archiving on: : Wednesday, March 3, 2021 - 7:16:50 PM

File

PG-ATS2020_A Sextuple.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

Aibin Yan, Yan Chen, Jun Zhou, Tianming Ni, Xiaoqing Wen, et al.. A Sextuple Cross-Coupled SRAM Cell Protected against Double-Node Upsets. ATS 2020 - 28th IEEE Asian Test Symposium, Nov 2020, Penang, Malaysia. pp.1-5, ⟨10.1109/ATS49688.2020.9301569⟩. ⟨lirmm-03035825⟩

Share

Metrics

Record views

28

Files downloads

74