Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2019

Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam


Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the memory from the irradiation were investigated. To study weakened but not fully stuck bits after irradiation, parameters such as the refresh frequency of the memories was varied. The effect on the number of stuck bits from reading and writing the memory was studied, as well as the effect from waiting a time span between writing and reading the memory. These parameters were found to matter in the observed number of errors in the memory. Data on the findings from the microbeam irradiation from tests with different test modes are presented in this paper regarding suck bits and bit upsets. The test modes include dynamic March test and data retention tests with only refresh operations during irradiation.
Fichier principal
Vignette du fichier
2019_RADECS___Stuck_and_weak_bits_in_SDRAM_from_a_heavy_ion_microbeam___HAL_Version.pdf (1.19 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

lirmm-03359010 , version 1 (29-09-2021)



Daniel Söderström, Lucas Matana Luza, Alexandre Bosser, Thierry Gil, Kay-Obbe Voss, et al.. Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam. RADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨10.1109/RADECS47380.2019.9745715⟩. ⟨lirmm-03359010⟩
41 View
175 Download



Gmail Facebook X LinkedIn More