A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2022

A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage

Aibin Yan
Liang Ding
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  • PersonId : 1113641
Zhen Zhou
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  • PersonId : 1161770
Zhengfeng Huang
Jie Cui

Abstract

With technology scaling down, the vulnerability of circuits to radiation and the increase of static power have become severe concerns. Spintronic devices such as magnetic tunnel junction (MTJ) have been developed to cope with many concerns, among which reliability concerns [1]. Spintronic devices have attractive properties, such as non-volatility and compatibility with conventional CMOS fabrication process. Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magnetic latch, namely M-TPDICE, that can completely tolerate single-node upsets (SNUs) and double-node upsets (DNUs). Simulations of the proposed latch with the HSPICE tool with a 45 nm CMOS technology model have demonstrated the effectiveness of the proposed latch.
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Dates and versions

lirmm-03770951 , version 1 (06-09-2022)

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Aibin Yan, Liang Ding, Zhen Zhou, Zhengfeng Huang, Jie Cui, et al.. A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage. ATS 2022 - 31st IEEE Asian Test Symposium, Nov 2022, Taichung, Taiwan. ⟨10.1109/ATS56056.2022.00013⟩. ⟨lirmm-03770951⟩
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