Non-Volatile Latch Designs with Node-Upset Tolerance and Recovery using Magnetic Tunnel Junctions and CMOS
Abstract
As semiconductor technologies scale down, radiativeparticle-induced soft errors and static power consumption are becoming major concerns for digital circuits. Magnetic-tunneljunctions (MTJs) are widely used to address these concerns. MTJs are non-volatile and compatible with traditional CMOS processes. In this paper, we first propose a double-node-upset (DNU) tolerant and non-volatile latch, i.e., M-TPDICE-V2, providing high reliability. Additionally, we further propose an advanced latch, namely M-8C, that is able to completely recover from single-nodeupsets (SNUs) and DNUs. M-8C uses a DNU recovery module and a backup and restore module based on a pair of MTJs. Furthermore, we propose a universal backup and restore module suitable for any latch providing non-volatility. We simulate the proposed latches using the Synopsys HSPICE tool with a 45nm CMOS process model. Simulation results confirm the superior capabilities of our proposed M-TPDICE-V2 and M-8C latches. MTPDICE-V2 exhibits strong SNU and DNU tolerance and nonvolatility, while the M-8C latch provides complete DNU recovery capabilities.
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