Reducing the Silicon Area Overhead of Counter-Based Rowhammer Mitigations - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Computer Architecture Letters Year : 2023

Reducing the Silicon Area Overhead of Counter-Based Rowhammer Mitigations

Loïc France
Florent Bruguier
David Novo
Pascal Benoit


Modern computer memories have shown to have reliability issues. The main memory is the target of a security threat called Rowhammer, which causes bit flips in adjacent victim cells of aggressor rows. Numerous countermeasures have been proposed, some of the most efficient ones relying on row access counters, with different techniques to reduce the impact on performance, energy consumption and silicon area. In these proposals, the number of counters is calculated using the maximum number of row activations that can be issued to the protected bank. As reducing the number of counters results in lower silicon area and energy overheads, this can have a direct impact on the production and usage costs. In this work, we demonstrate that two of the most efficient countermeasures can have their silicon area overhead reduced by approximately 50% without impacting the protection level by changing their counting granularity.


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lirmm-04420368 , version 1 (26-01-2024)



Loïc France, Florent Bruguier, David Novo, Maria Mushtaq, Pascal Benoit. Reducing the Silicon Area Overhead of Counter-Based Rowhammer Mitigations. IEEE Computer Architecture Letters, inPress, IEEE Computer Architecture Letters, pp.1-4. ⟨10.1109/LCA.2023.3328824⟩. ⟨lirmm-04420368⟩
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