Journal Articles IEEE Transactions on Circuits and Systems II: Express Briefs Year : 2024

FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell

Aibin Yan
Yu Chen
  • Function : Author
Zhongyu Gao
Tianming Ni
Zhengfeng Huang
Jie Cui
Xiaoqing Wen

Abstract

The Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the frequent data transfer between the main memory and the processor. The Processing in-Memory (PiM) capabilities of emerging nonvolatile devices have the potential to partially alleviate the memory wall problem. In this paper, we use the ferroelectric field-effect transistor (FeFET), one of the emerging nonvolatile devices, to design a multifunctional processing in-memory cell, namely FeMPIM. It can perform multiple logic operations in computing mode as well as content searching in ternary content-addressable memory (TCAM) mode. Simulation results demonstrate the multifunctional capability of the proposed FeMPIM as well as its moderate overhead when compared with the complementary metal-oxide-semiconductor (CMOS) based and the existing FeFET-based devices.
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Dates and versions

lirmm-04737485 , version 1 (15-10-2024)

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Aibin Yan, Yu Chen, Zhongyu Gao, Tianming Ni, Zhengfeng Huang, et al.. FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71 (4), pp.2299-2303. ⟨10.1109/TCSII.2023.3331267⟩. ⟨lirmm-04737485⟩
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