Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2024

Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM

Abstract

Memory components are increasingly used in modern systems such as System-on-Chip (SoC). Moreover, they are becoming more complex as the technology node shrinks, which makes them more prone to manufacturing defects. A large part of memory testing is based on functional tests, using March algorithms to target Functional Fault Models (FFMs). New test methodologies are developed to anticipate the growing complexity of memory components, such as the Cell-Aware (CA) test methodology which has been recently introduced in the field of memory testing. However, in order to apply the CA methodology, which introduces a structural consideration of the circuit to be tested, an accurate digital model of the SRAM has to be designed. This paper proposes a methodology to produce a digital Verilog-HDL netlist of an SRAM, based on an initial analog model (SPICE netlist). The resulting digital model considers the bidirectional nature of the memory, and it is ATPG-compliant, allowing test patterns generation and fault simulation as well.
Fichier principal
Vignette du fichier
Camera ready.pdf (407.52 Ko) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

lirmm-04738159 , version 1 (15-10-2024)

Identifiers

  • HAL Id : lirmm-04738159 , version 1

Cite

Dorian Ronga, Xhesila Xhafa, Eric Faehn, Patrick Girard, Thibault Vayssade, et al.. Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM. DTTIS 2024 - IEEE International Conference on Design, Test & Technology of Integrated Systems, Oct 2024, Aix-en-Provence, France. In press. ⟨lirmm-04738159⟩
19 View
30 Download

Share

More