Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2005

Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations

Christophe Entringer
  • Function : Author
P. Flatrese
  • Function : Author
Pascal Salomé
  • Function : Author
Pascal Nouet
Conception et Test de Systèmes MICroélectroniques
CV
Florence Azaïs
Conception et Test de Systèmes MICroélectroniques
CV

Christine Carvalho De Matos  : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00106519

Submitted on : Monday, October 16, 2006-8:38:42 AM

Last modification on : Friday, March 24, 2023-2:52:48 PM

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lirmm-00106519 , version 1 (16-10-2006)

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  • HAL Id : lirmm-00106519 , version 1

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Christophe Entringer, P. Flatrese, Pascal Salomé, Pascal Nouet, Florence Azaïs. Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations. EUROSOI'05, Jan 2005, Grenade, Spain. ⟨lirmm-00106519⟩

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