Skip to Main content Skip to Navigation
Conference papers

Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations

Christophe Entringer P. Flatrese Pascal Salomé Pascal Nouet 1 Florence Azaïs 1 
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Document type :
Conference papers
Complete list of metadata
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00106519
Contributor : Christine Carvalho De Matos Connect in order to contact the contributor
Submitted on : Monday, October 16, 2006 - 8:38:42 AM
Last modification on : Friday, August 5, 2022 - 10:47:53 AM

Identifiers

  • HAL Id : lirmm-00106519, version 1

Collections

CNRS | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Christophe Entringer, P. Flatrese, Pascal Salomé, Pascal Nouet, Florence Azaïs. Comparison Between 0.13 µm PD-SOI Gated Diode and non Gated Diode through DC TCAD Simulations. EUROSOI'05, Jan 2005, Grenade, Spain. ⟨lirmm-00106519⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

121