Physical Extension of the Logical Effort Model - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2004

Physical Extension of the Logical Effort Model

Abstract

The logical effort method has appeared very convenient for fast estimation and optimization of single paths. However it necessitates a calibration of all the gates of the library and appears to be sub-optimal for a complex implementation. This is due to the inability of this model in capturing I/O coupling and input ramp effects. In this paper, we introduce a physically based extension of the logical effort model, considering I/O coupling capacitance and input ramp effects. This extension of the logical effort model is deduced from an analysis of the supply gate switching process. Validation of this model is performed on 0.18µm and 0.13µm STM technologies. Application is given to the definition of a compact representation of CMOS library timing performance.
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Dates and versions

lirmm-00108895 , version 1 (13-09-2019)

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Benoit Lasbouygues, Robin M. Wilson, Philippe Maurine, Nadine Azemard, Daniel Auvergne. Physical Extension of the Logical Effort Model. PATMOS: Power And Timing Modeling, Optimization and Simulation, Sep 2004, Santorini, Greece. pp.838-848, ⟨10.1007/978-3-540-30205-6_86⟩. ⟨lirmm-00108895⟩
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