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Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00158543
Contributor : Martine Peridier <>
Submitted on : Friday, June 29, 2007 - 9:52:03 AM
Last modification on : Wednesday, August 28, 2019 - 3:46:02 PM

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Olivier Ginez, Jean-Michel Daga, Patrick Girard, Christian Landrault, Serge Pravossoudovitch, et al.. Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories. ETS: European Test Symposium, May 2007, Freiburg, Germany. pp.77-82, ⟨10.1109/ETS.2007.20⟩. ⟨lirmm-00158543⟩

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