Boolean and Current Detection of MOS Transistor with Gate Oxide Short

Abstract : This paper studies the voltage and current behavior of Gate Oxide Short faults due to pinhole in the gate oxide. The objective of this paper is to give a detailed analysis of the behavior of the GOS defect taking into account the random parameter of the defect such as the GOS resistance, the GOS location and the GOS size. Because an accurate analysis is desired, the bi-dimensional array will be used. Because a complete analysis is desired, we derive characteristic of the GOS as a function of the GOS resistance, location and size. Finally, because a realistic analysis is desired the model has been validated through measurements of GOS intentionally injected into a designed and manufactured circuit.
Type de document :
Communication dans un congrès
IEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10, 2001
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370400
Contributeur : Jean-Marc Galliere <>
Soumis le : mardi 24 mars 2009 - 12:09:51
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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  • HAL Id : lirmm-00370400, version 1

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Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Boolean and Current Detection of MOS Transistor with Gate Oxide Short. IEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10, 2001. 〈lirmm-00370400〉

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