SRAM Core-cell Quality Metrics
Abstract
In the context of test and reliability of SRAM memories, it is necessary to express the quality of a single core-cell quantitatively. This measure will be called quality metric (QM). QMs are specially needed to analyze impact of the voltage threshold variability on the SRAM core-cell in recent nanotechnologies. In this paper we have collected SRAM core-cell QMs proposed in recent literature.