Modeling the Influence of Etching Defects on the Sensitivity of MEMS Convective Accelerometers

In this paper, a behavioral model that includes the influence of etching defects on the sensitivity of MEMS convective accelerometers is presented. Starting from an existing behavioral model, new physically-based expressions have been derived to introduce etching defects in the simulation of thermal conduction in the sensor. In addition, a semi-empirical model has been introduced for thermal convection. Finally, a very good agreement is obtained between the behavioral model and FEM simulations.

Domaines

Micro et nanotechnologies/Microélectronique

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ims3tw10-16.pdf (477.2 Ko)

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Martine Peridier : Connectez-vous pour contacter le contributeur

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00494555

Soumis le : mercredi 23 juin 2010-15:25:43

Dernière modification le : vendredi 24 mars 2023-14:52:53

Archivage à long terme le : jeudi 1 décembre 2016-16:13:59

Dates et versions

lirmm-00494555 , version 1 (23-06-2010)

Identifiants

HAL Id : lirmm-00494555 , version 1

Citer

Ahmed Rekik, Florence Azaïs, Norbert Dumas, Frédérick Mailly, Pascal Nouet. Modeling the Influence of Etching Defects on the Sensitivity of MEMS Convective Accelerometers. IMS3TW'10: 16th IEEE International Mixed-Signals, Sensors and Systems Test Workshop, La Grande Motte, Montpellier, France. pp.N/A. ⟨lirmm-00494555⟩

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