STT-MRAM-Based PUF Architecture exploiting Magnetic Tunnel Junction Fabrication-Induced Variability - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles ACM Journal on Emerging Technologies in Computing Systems Year : 2016

STT-MRAM-Based PUF Architecture exploiting Magnetic Tunnel Junction Fabrication-Induced Variability

Abstract

Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) are widely discussed in literature. One of the most investigated solutions today is based on SRAMs. However, the rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. In this paper, we propose an innovative PUF design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the Magnetic Tunnel Junction (MTJ) device in anti-parallel magnetization. We will demonstrate that the proposed solution is robust, unclonable and unpredictable.
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Dates and versions

lirmm-01234046 , version 1 (26-11-2015)

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Elena Ioana Vatajelu, Giorgio Di Natale, Mario Barbareschi, Lionel Torres, Marco Indaco, et al.. STT-MRAM-Based PUF Architecture exploiting Magnetic Tunnel Junction Fabrication-Induced Variability. ACM Journal on Emerging Technologies in Computing Systems, 2016, 13 (1), ⟨10.1145/2790302⟩. ⟨lirmm-01234046⟩
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