Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Abstract : Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
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Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1739-1746. 〈http://ieeexplore.ieee.org/Xplore/home.jsp〉. 〈10.1109/TNS.2014.2332813〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237646
Contributeur : Luigi Dilillo <>
Soumis le : jeudi 3 décembre 2015 - 15:31:30
Dernière modification le : jeudi 6 septembre 2018 - 14:02:02

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Lionel Foro, Antoine Touboul, Alain Michez, Frédéric Wrobel, Paolo Rech, et al.. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1739-1746. 〈http://ieeexplore.ieee.org/Xplore/home.jsp〉. 〈10.1109/TNS.2014.2332813〉. 〈lirmm-01237646〉

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