Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2014

Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Abstract

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
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lirmm-01237646 , version 1 (03-12-2015)

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Lionel Foro, Antoine Touboul, Alain Michez, Frédéric Wrobel, Paolo Rech, et al.. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.1739-1746. ⟨10.1109/TNS.2014.2332813⟩. ⟨lirmm-01237646⟩
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