Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Abstract : Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237646
Contributor : Luigi Dilillo <>
Submitted on : Thursday, December 3, 2015 - 3:31:30 PM
Last modification on : Thursday, July 25, 2019 - 4:24:07 PM

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Lionel Foro, Antoine Touboul, Alain Michez, Frédéric Wrobel, Paolo Rech, et al.. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1739-1746. ⟨10.1109/TNS.2014.2332813⟩. ⟨lirmm-01237646⟩

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