Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.

Mots clés

Atmospheric neutrons Single Event Burnout (SEB) Cross section Single Event Gate Rupture (SEGR) gate oxide breakdown trench gate fieldstop Insulated Gate Bipolar Transistor (IGBT)

Domaines

Electronique Physique [physics]

Luigi Dilillo : Connectez-vous pour contacter le contributeur

https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237646

Soumis le : jeudi 3 décembre 2015-15:31:30

Dernière modification le : mardi 23 janvier 2024-12:28:53

Dates et versions

lirmm-01237646 , version 1 (03-12-2015)

Identifiants

HAL Id : lirmm-01237646 , version 1
DOI : 10.1109/TNS.2014.2332813

Citer

Lionel Foro, Antoine Touboul, Alain Michez, Frédéric Wrobel, Paolo Rech, et al.. Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.1739-1746. ⟨10.1109/TNS.2014.2332813⟩. ⟨lirmm-01237646⟩

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