Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions

Viyas Gupta 1 Alexandre Bosser Georgios Tsiligiannis 2 Ali Mohammadzadeh Arto Javanainen Ari Virtanen Helmut Puchner Frédéric Saigné 1 Frédéric Wrobel 1 Luigi Dilillo 2
1 IES - Institut d’Electronique et des Systèmes
2 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : The impact of heavy ions on commercial Ferroelectric Memories (FRAMs) is analyzed. Moreover, the influence of different test modes and stimuli on their error rate is investigated.
Keywords : test conditions Ionizing radiation FRAM
Type de document :
Communication dans un congrès
RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. 15th European Conference on Radiation and Its Effects on Components and Systems, 2015, 〈http://www.radecs2015.org/files/CONFERENCE_PROGRAM.pdf〉. 〈10.1109/RADECS.2015.7365617〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238392
Contributeur : Luigi Dilillo <>
Soumis le : vendredi 4 décembre 2015 - 17:57:38
Dernière modification le : jeudi 11 janvier 2018 - 06:27:29

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IES | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

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Viyas Gupta, Alexandre Bosser, Georgios Tsiligiannis, Ali Mohammadzadeh, Arto Javanainen, et al.. Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions. RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. 15th European Conference on Radiation and Its Effects on Components and Systems, 2015, 〈http://www.radecs2015.org/files/CONFERENCE_PROGRAM.pdf〉. 〈10.1109/RADECS.2015.7365617〉. 〈lirmm-01238392〉

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