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Conference Papers Year : 2015

Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions

Abstract

The impact of heavy ions on commercial Ferroelectric Memories (FRAMs) is analyzed. Moreover, the influence of different test modes and stimuli on their error rate is investigated.
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Dates and versions

lirmm-01238392 , version 1 (04-12-2015)

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Viyas Gupta, Alexandre Louis Bosser, Georgios Tsiligiannis, Ali Mohammadzadeh, Arto Javanainen, et al.. Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions. RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. ⟨10.1109/RADECS.2015.7365617⟩. ⟨lirmm-01238392⟩
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