Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions

Abstract : The impact of heavy ions on commercial Ferroelectric Memories (FRAMs) is analyzed. Moreover, the influence of different test modes and stimuli on their error rate is investigated.
Type de document :
Communication dans un congrès
RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. 15th European Conference on Radiation and Its Effects on Components and Systems, 2015, 〈http://www.radecs2015.org/files/CONFERENCE_PROGRAM.pdf〉. 〈10.1109/RADECS.2015.7365617〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238392
Contributeur : Luigi Dilillo <>
Soumis le : vendredi 4 décembre 2015 - 17:57:38
Dernière modification le : mardi 16 octobre 2018 - 10:48:05

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Viyas Gupta, Alexandre Bosser, Georgios Tsiligiannis, Ali Mohammadzadeh, Arto Javanainen, et al.. Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions. RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. 15th European Conference on Radiation and Its Effects on Components and Systems, 2015, 〈http://www.radecs2015.org/files/CONFERENCE_PROGRAM.pdf〉. 〈10.1109/RADECS.2015.7365617〉. 〈lirmm-01238392〉

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