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Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions

Viyas Gupta 1, 2 Alexandre Louis Bosser 2 Georgios Tsiligiannis 3 Ali Mohammadzadeh Arto Javanainen Ari Virtanen Helmut Puchner Frédéric Saigné 1, 4 Frédéric Wrobel 1, 4 Luigi Dilillo 3 
1 IES - Institut d’Electronique et des Systèmes
2 TEST - Test and dEpendability of microelectronic integrated SysTems
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
3 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
4 RADIAC - Radiations et composants
IES - Institut d’Electronique et des Systèmes
Abstract : The impact of heavy ions on commercial Ferroelectric Memories (FRAMs) is analyzed. Moreover, the influence of different test modes and stimuli on their error rate is investigated.
Keywords : FRAM Ionizing radiation test conditions
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238392
Contributor : Luigi Dilillo Connect in order to contact the contributor
Submitted on : Friday, December 4, 2015 - 5:57:38 PM
Last modification on : Friday, August 5, 2022 - 3:03:29 PM

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CNRS | IES | SYSMIC | LIRMM | TEST | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Viyas Gupta, Alexandre Louis Bosser, Georgios Tsiligiannis, Ali Mohammadzadeh, Arto Javanainen, et al.. Heavy-ion radiation impact on a 4Mb FRAM under Different Test Conditions. RADECS: Radiation and Its Effects on Components and Systems, Sep 2015, Moscou, Russia. ⟨10.1109/RADECS.2015.7365617⟩. ⟨lirmm-01238392⟩

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