Experimental Heavy-Ion SEU Cross-Sections Of Sram Memory Components

Alexandre Louis Bosser Luigi Dilillo 1 Viyas Gupta Arto Javanainen Heikki Kettunen Mario Rossi Georgios Tsiligiannis 1 Ari Virtanen
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : In this work the heavy ion induced Single Event Upset (SEU) cross-sections and resulting failure rates of SRAM memory components were studied.
Keywords : SRAM Heavy ions Cross section SEU
Document type :
Conference papers
Complete list of metadatas

Cited literature [2 references]  Display  Hide  Download
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238439
Contributor : Luigi Dilillo <>
Submitted on : Monday, July 22, 2019 - 12:01:17 PM
Last modification on : Monday, July 22, 2019 - 12:02:33 PM

File

Physics Days_2014.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : lirmm-01238439, version 1

Collections

LIRMM | SYSMIC | TEST | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Alexandre Louis Bosser, Luigi Dilillo, Viyas Gupta, Arto Javanainen, Heikki Kettunen, et al.. Experimental Heavy-Ion SEU Cross-Sections Of Sram Memory Components. Physics Days, Finnish Physical Society, Tampere University of Technology (TUT), and Tavicon Ltd., Mar 2014, Tampere, Finland. ⟨lirmm-01238439⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

204

Files downloads

8

Contact

CCSD