A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs

Abstract : Magnetic random access memory (MRAM) is an emerging technology with potential to become the universal on-chip memory. Among existing MRAM technologies, thermally assisted switching (TAS)-MRAM technology offers several advantages compared with other technologies: selectivity, single magnetic field, and high-integration density. In this paper, we analyze the impact of resistive-open defects on TAS-MRAM behavior. Electrical simulations were performed on a hypothetical 16 word TAS-MRAM architecture enabling any combination of read and write operations. Results show that read and write sequences may be affected by resistive-open defects that may induce single and double-cell faulty behaviors. As a next step, we will exploit the analyses results to guide the test phase by providing effective test algorithms targeting faults related to actual defects affecting TAS-MRAM architectures.
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Article dans une revue
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, IEEE, 2014, 22 (11), pp.2326-2335. 〈10.1109/TVLSI.2013.2294080〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01248578
Contributeur : Aida Todri-Sanial <>
Soumis le : dimanche 27 décembre 2015 - 21:03:55
Dernière modification le : mardi 25 septembre 2018 - 14:30:02

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João Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, IEEE, 2014, 22 (11), pp.2326-2335. 〈10.1109/TVLSI.2013.2294080〉. 〈lirmm-01248578〉

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