A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Very Large Scale Integration (VLSI) Systems Year : 2014

A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs

Abstract

Magnetic random access memory (MRAM) is an emerging technology with potential to become the universal on-chip memory. Among existing MRAM technologies, thermally assisted switching (TAS)-MRAM technology offers several advantages compared with other technologies: selectivity, single magnetic field, and high-integration density. In this paper, we analyze the impact of resistive-open defects on TAS-MRAM behavior. Electrical simulations were performed on a hypothetical 16 word TAS-MRAM architecture enabling any combination of read and write operations. Results show that read and write sequences may be affected by resistive-open defects that may induce single and double-cell faulty behaviors. As a next step, we will exploit the analyses results to guide the test phase by providing effective test algorithms targeting faults related to actual defects affecting TAS-MRAM architectures.
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Dates and versions

lirmm-01248578 , version 1 (27-12-2015)

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Cite

João Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014, 22 (11), pp.2326-2335. ⟨10.1109/TVLSI.2013.2294080⟩. ⟨lirmm-01248578⟩
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