Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2017

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Abstract

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Fichier principal
Vignette du fichier
javanainenturowskietalheavyioninduced.pdf (1.07 Mo) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

lirmm-02021535 , version 1 (20-12-2019)

Identifiers

Cite

Arto Javanainen, Marek Turowski, Kenneth Galloway, Christopher Nicklaw, Véronique Ferlet-Cavrois, et al.. Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 2017, 64 (8), pp.2031-2037. ⟨10.1109/TNS.2017.2717045⟩. ⟨lirmm-02021535⟩
121 View
267 Download

Altmetric

Share

Gmail Facebook X LinkedIn More