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Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Abstract : Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
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Arto Javanainen, Marek Turowski, Kenneth Galloway, Christopher Nicklaw, Véronique Ferlet-Cavrois, et al.. Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, 64 (8), pp.2031-2037. ⟨10.1109/TNS.2017.2717045⟩. ⟨lirmm-02021535⟩

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