Thermally Assisted Switching (TAS) MRAM based TRNG - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Poster Year : 2018

Thermally Assisted Switching (TAS) MRAM based TRNG

Frédéric Martial Ouattara
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Lionel Torres
Ken Mackay
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An important building block for many cryptographic systems is a random number generator (RNG). However, RNGs are categorized into two distinct groups: pseudo random number generators (PRNGs) and truly random generators (TRNGs). This work experimentally demon- strates a TRNG based on Thermally Assisted Switch- ing Magnetic Random Access Memory (TAS-MRAM). The heating voltage when writing TAS-MRAM is used to pro- vide the stochastic switching behavior as a source of ran- domness. XOR post processing are used to performed a good random numbers which passed the statistical test of NIST SP-800 with the appropriate pass rate.
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lirmm-02079681 , version 1 (26-03-2019)


  • HAL Id : lirmm-02079681 , version 1


Frédéric Martial Ouattara, Lionel Torres, Ken Mackay. Thermally Assisted Switching (TAS) MRAM based TRNG. 12e Colloque National du GDR SoC/SiP, Jun 2018, Paris, France. , 2018. ⟨lirmm-02079681⟩
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