Skip to Main content Skip to Navigation
Journal articles

Spin-Transfer Torque Magnetic Tunnel Junction for Single-Event Effects Mitigation in IC Design

Odilia Coi 1, 2 Gregory Di Pendina 1 Guillaume Prenat 1 Lionel Torres 2
2 ADAC - ADAptive Computing
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : For embedded systems in harsh environments, a radiation robust circuit design is still an open challenge. As complementary-metal-oxide semiconductor (CMOS) processes get denser and smaller, their immunity toward particle strikes decreases drastically. Due to its good radiation effects tolerance and its inherent nonvolatility, spin-transfer torque magnetic tunnel junction (STT-MTJ) is considered a promising candidate for high-reliability electronics. Nevertheless, when integrated in a CMOS circuit, these magnetic devices could still be affected by upsets. To decrease the probability of this occurrence, a radiation robust setup is used to calibrate a physics-based 20-nm MTJ compact model, integrated in a 28-nm Fully Depleted Silicon On Insulator (FD-SOI) technology. Thus, a radiation hardening by design (RHBD) solution is presented, where a nonvolatile sequential block enables one to mitigate the single-event effects (SEEs).
Complete list of metadata
Contributor : Lionel Torres Connect in order to contact the contributor
Submitted on : Wednesday, June 9, 2021 - 3:25:46 PM
Last modification on : Wednesday, November 3, 2021 - 7:45:18 AM
Long-term archiving on: : Friday, September 10, 2021 - 6:50:07 PM


FINAL VERSION_TNS_mitigation_i...
Files produced by the author(s)




Odilia Coi, Gregory Di Pendina, Guillaume Prenat, Lionel Torres. Spin-Transfer Torque Magnetic Tunnel Junction for Single-Event Effects Mitigation in IC Design. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1674-1681. ⟨10.1109/TNS.2020.3002649⟩. ⟨lirmm-02957089⟩



Les métriques sont temporairement indisponibles