Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM
Résumé
In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.
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2020_DTIS____HAL_Version__Effects_of_Thermal_Neutron_Irradiation_on_a_Self_Refresh_DRAM.pdf (12 Mo)
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