Dual-Interlocked-Storage-Cell-Based Double-Node-Upset Self-Recoverable Flip-Flop Design for Safety-Critical Applications - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2020

Dual-Interlocked-Storage-Cell-Based Double-Node-Upset Self-Recoverable Flip-Flop Design for Safety-Critical Applications

Zhelong Xu
  • Function : Author
  • PersonId : 1083518
Jie Cui
Zhengfeng Huang
Xiaoqing Wen

Abstract

This paper presents a novel dual-interlocked storagecell (DICE)-based double-node-upset (DNU) self-recoverable, namely DURI-FF, in the nano-scale CMOS technology. The master latch of the DURI-FF cell consists of three transmission gates (TGs) and three interlocked DICEs with three common nodes. The common nodes are connected to TGs for value initialization. The slave latch of the DURI-FF cell comprises six TGs, six inverters and three interlocked DICEs. The outputs of the inverters respectively feed the internal nodes of the slave latch. The interlocked DICEs make the master latch and the slave latch DNU self-recoverable. Simulation results validate the DNU self-recoverability of the proposed DURI-FF cell. Moreover, compared with the state-of-the-art hardened flip-flop cells, the proposed DURI-FF cell achieves roughly 43% delay reduction at the cost of moderate silicon area and power dissipation.
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Dates and versions

lirmm-03035619 , version 1 (02-12-2020)

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Aibin Yan, Zhelong Xu, Jie Cui, Zuobin Ying, Zhengfeng Huang, et al.. Dual-Interlocked-Storage-Cell-Based Double-Node-Upset Self-Recoverable Flip-Flop Design for Safety-Critical Applications. ISCAS 2020 - IEEE International Symposium on Circuits and Systems, Oct 2020, Sevilla (virtual), Spain. pp.1-5, ⟨10.1109/ISCAS45731.2020.9181135⟩. ⟨lirmm-03035619⟩
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