Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash
Abstract
The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.
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2019_RADECS___Vertical_Line_Fault_Mechanism_Induced_by_Heavy_Ions_in_an_SLC_NAND_Flash___HAL_Version.pdf (1.43 Mo)
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