Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2019

Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

Abstract

The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.
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Dates and versions

lirmm-03358989 , version 1 (29-09-2021)

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Viyas Gupta, Alexandre Louis Bosser, Lucas Matana Luza, Daniel Söderström, Arto Javanainen, et al.. Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash. RADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨10.1109/RADECS47380.2019.9745668⟩. ⟨lirmm-03358989⟩
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