Two sextuple cross-coupled SRAM cells with double-node-upset protection and cost optimization for aerospace applications - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles Microelectronics Journal Year : 2023

Two sextuple cross-coupled SRAM cells with double-node-upset protection and cost optimization for aerospace applications

Jing Xiang
  • Function : Author
  • PersonId : 1161846
Yang Chang
  • Function : Author
  • PersonId : 1293810
Zhengfeng Huang
Jie Cui
Xiaoqing Wen

Abstract

This paper first presents a double-node upset (DNU) protected and sextuple cross-coupled static-random-access memory (SRAM) cell, i.e., SCCS-18T, for aerospace applications. The cell can recover from each possible single-node upsets (SNUs) as well as partial DNUs due to its formed large feedback loop that can retain values and intercept errors. To improve DNU self-recoverability, an enhanced version of the SCCS-18T cell, namely SCCS-18T-EV, is proposed. Due to the new formed structure, the SCCS-18T-EV can recover from more DNUs. Since parallel access transistors are used, the proposed cells have optimized read/write performance. Simulation results demonstrate the node-upset tolerance as well as the optimized operation performance of the proposed SCCS-18T and SCCS-18T-EV cells compared to existing SRAM cells.
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Dates and versions

lirmm-04239447 , version 1 (12-10-2023)

Identifiers

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Aibin Yan, Jing Xiang, Yang Chang, Zhengfeng Huang, Jie Cui, et al.. Two sextuple cross-coupled SRAM cells with double-node-upset protection and cost optimization for aerospace applications. Microelectronics Journal, 2023, 139, pp.105908. ⟨10.1016/j.mejo.2023.105908⟩. ⟨lirmm-04239447⟩
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