Aging and voltage scaling impacts under neutron-induced soft error rate in SRAM-based FPGAs

Fernanda Lima Kastensmidt 1 Jorge Tonfat 1 Thiago Both 2 Paolo Rech 1 Gilson Wirth 1 Ricardo Reis 1 Florent Bruguier 3 Pascal Benoit 3 Lionel Torres 3 Christopher Frost 4
1 PGMICRO - PgMicro - Instituto de Informática [UFRGS]
2 UFRGS - Departamento de Engenharia Eletrica
3 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
4 ISIS - Science and Technology Facilities Council
Abstract : This work investigates the effects of aging and voltage scaling in neutron-induced bit-flip in SRAM-based FPGAs. Experimental results show that aging and voltage scaling can increase in at least two times the susceptibility of SRAM-based FPGAs to Soft Error Rate (SER). These results are innovative, because they combine three real effects that occur in programmable circuits operating at ground-level applications. In addition, a model at electrical simulation for aging, soft error and different voltages was described to investigate the effects observed at the practical neutron irradiation experiment. Results can guide designers to predict soft error effects during the lifetime of devices operating in different power supply mode.
Keywords : FPGA radiation aging volage scalling
Type de document :
Communication dans un congrès
ETS: European Test Symposium, May 2014, Paderborn, Germany. 19th IEEE European Test Symposium, 2014, 〈10.1109/ETS.2014.6847845〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01421128
Contributeur : Caroline Lebrun <>
Soumis le : mercredi 21 décembre 2016 - 16:10:09
Dernière modification le : jeudi 28 juin 2018 - 15:12:02
Document(s) archivé(s) le : mercredi 22 mars 2017 - 12:13:14

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Fernanda Lima Kastensmidt, Jorge Tonfat, Thiago Both, Paolo Rech, Gilson Wirth, et al.. Aging and voltage scaling impacts under neutron-induced soft error rate in SRAM-based FPGAs. ETS: European Test Symposium, May 2014, Paderborn, Germany. 19th IEEE European Test Symposium, 2014, 〈10.1109/ETS.2014.6847845〉. 〈lirmm-01421128〉

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