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Conference Papers Year : 2019

Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

Abstract

The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.

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Electronics Micro and nanotechnologies/Microelectronics Embedded Systems
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Luigi Dilillo  : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-03358989

Submitted on : Wednesday, September 29, 2021-5:40:49 PM

Last modification on : Friday, March 24, 2023-2:53:23 PM

Long-term archiving on: Thursday, December 30, 2021-7:53:00 PM

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Dates and versions

lirmm-03358989 , version 1 (29-09-2021)

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  • HAL Id : lirmm-03358989 , version 1

Cite

Viyas Gupta, Alexandre Louis Bosser, Lucas Matana Luza, Daniel Söderström, Arto Javanainen, et al.. Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash. RADECS 2019 - 30th European Conference on Radiation and Its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨lirmm-03358989⟩

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