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Conference Papers Year : 2022

Effects of High-Energy Protons on a Self-Refresh DRAM

Abstract

This work targets the study of the effects of high-energy protons on a commercial self-refresh DRAM. The memory devices under investigation were exposed to high-energy protons varying in a range from 70 MeV up to 230 MeV at the Proton Irradiation Facility in the Paul Scherrer Institute. The radiation-induced faults were identified as Single-Bit Upsets, stuck bits, and block errors. These results are in line with the outcome of our previous test campaigns, targeting thermal and atmospheric-like neutrons. The event cross sections for each fault type and energy are presented and discussed.
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Dates and versions

lirmm-03832662 , version 1 (27-10-2022)

Identifiers

  • HAL Id : lirmm-03832662 , version 1

Cite

Lucas Matana Luza, Carolina Imianosky, André Martins Pio de Mattos, Douglas Almeida dos Santos, Daniel Söderström, et al.. Effects of High-Energy Protons on a Self-Refresh DRAM. SELSE 2022 - 18th IEEE Workshop on Silicon Errors in Logic – System Effects, May 2022, Virtual Event, Italy. ⟨lirmm-03832662⟩
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